NEO Semiconductor Launches NEO.AI Memory Platform to Solve AI's Two Biggest Memory Bottlenecks

NEO Semiconductor announced NEO.AI on Aug. 4, 2026, in Santa Clara, California, identifying memory as a growing constraint on artificial-intelligence performance. The company said increasingly large and complex AI models are intensifying the “AI Memory Wall,” as conventional SRAM scaling slows and conventional two-dimensional DRAM limits HBM capacity. The platform combines X-SRAM and 3D X-DRAM in a unified architecture intended to expand on-chip memory, increase HBM capacity, improve processor utilization and support future scalability. X-SRAM is designed to deliver up to 5× higher memory density than conventional SRAM while retaining SRAM-class performance and compatibility with advanced nanosheet CMOS processes. NEO Semiconductor also said it provides a path toward future monolithic 3D X-SRAM implementations, potentially supporting continued on-chip memory expansion. 3D X-DRAM uses established 3D NAND manufacturing processes and is designed to provide up to 10× the memory capacity of conventional DRAM. The company said successful proof-of-concept validation supports its potential as a scalable and manufacturable technology for next-generation HBM. Andy Hsu, NEO Semiconductor’s founder and CEO, said X-SRAM and 3D X-DRAM address AI’s two largest memory bottlenecks by expanding on-chip memory and HBM capacity. Stan Shih, founder and former chairman and CEO of Acer, a former TSMC board director for more than 20 years, and an NEO Semiconductor advisory board member, said the technologies could create opportunities across the semiconductor industry and AI ecosystem. Hsu is scheduled to present a keynote on Aug. 5 at 11 a.m. PDT at FMS: The Future of Memory and Storage. FMS 2026 runs Aug. 4–6 at the Santa Clara Convention Center. NEO Semiconductor will exhibit at Booth 507. Founded in 2012 and headquartered in San Jose, California, the company is advancing NEO.AI, X-SRAM, 3D X-DRAM, X-HBM, X-NAND and 3D X-AI toward commercialization. More information is available at www.neosemic.com. Media and analyst contact: Maya Lustig.